TEMPERATURE DEPENDENCE OF PHASE TRANSFORMATION PRESSURE IN SILICON

Document Type : Regular Paper

Authors

Faculty of Physics, University of Tabriz, I. R. of Iran

Abstract

In this experimental work the pressure induced phase transformation of silicon and Germanium
has been studied. It was shown that at a particular value of applied pressure, (Pt), depending on the sample
temperature, the electrical resistance of the specimen falls off to a metallic state. The main goal of this study
was to find out how the phase transformation pressure, Pt, for a p-type silicon varies with the sample
temperature. The results show that, the value of Pt decreases linearly as the temperature of the sample
increases. Meanwhile, other related results including the rate of resistance change in accordance with applied
pressure on the sample at different temperatures (~270-350K), both for the semiconductor and the metallic
state of the specimen were determined. In another effort, the amount of Pt for an n-type germanium, but only
at room temperature, was also determined.

Keywords

Iranian Journal of Science
Volume 30, Issue 3 - Serial Number 3
November and December 2006
Pages 279-283

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